| PART |
Description |
Maker |
| LP62S16256FU-70LLI LP62S16256FU-55LLI |
70ns; operating current:40mA; standby current:10uA; 256K x 16bit low voltage CMOS SRAM
55ns; operating current:40mA; standby current:10uA; 256K x 16bit low voltage CMOS SRAM
|
AMIC Technology
|
| BD1484EFJ |
Low Standby Current during Shutdown Mode
|
Rohm
|
| BD1482EFJ |
Low Standby Current during Shutdown Mode
|
Rohm
|
| ATA6831-PIPW ATA6831-PISW ATA6831-PIQW ATA683110 |
Very Low Quiescent Current IVS Standby Mode over Total Temperature Range
Very Low Quiescent Current IVS < 5 μA in Standby Mode over Total Temperature Range
|
ATMEL Corporation
|
| NCP1200A-D |
PWM Current-Mode Controller for Universal Off-Line Supplies Featuring Low Standby Power
|
ON Semiconductor
|
| NCP1200AP100G |
PWM Current-Mode Controller for Universal Off-Line Supplies Featuring Low Standby Power
|
ONSEMI
|
| PNP3055E |
PowerMOS transistor. Drain-source voltage 60 V. Drain current(DC) 12 A.
|
Philips
|
| A615308S-10 A615308V-10 |
10ns; operating current:150mA; standby current: 12mA 32K x 8bit high speed CMOS SRAM
|
AMIC Technology
|
| IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
|
General Electric Solid State
GE Solid State
|
